METHOD FOR FORMING DAMASCENE METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a damascene metal line of a semiconductor device is provided to be capable of restraining the increase of leakage current by completely removing remaining metal using a dry etching process. CONSTITUTION: After sequentially forming the first insulating layer(410) and the first metal layer pattern(420) on a semiconductor substrate(400), the second insulating layer(430) is formed on the first metal layer pattern. A plurality of contact holes are formed by selectively etching the second insulating layer for exposing the first metal layer pattern. The second metal layer pattern(445) is formed in the contact hole. At this time, metal residues are formed on the second insulating layer. The upper portion of the second insulating layer is removed by carrying out a dry etching process using the etching selectivity between the second insulating layer and the second metal layer pattern for protruding the upper portion of the second metal layer pattern. At this time, the metal residues are completely removed. Then, the third insulating layer is formed on the entire surface of the resultant structure.