IMAGE SENSOR FOR IMPROVING PHOTO SENSITIVITY AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of improving photo sensitivity by increasing the area of a photodiode in a pixel unit. CONSTITUTION: A plurality of channel stop regions(CST) is formed in a semiconductor layer. The first impurity region(n1-) is formed in the semiconductor layer located between the channel stop regions(CST). A gate electrode(Tx) is formed on the semiconductor layer located between the channel stop regions(CST). The second impurity region(n2-) is formed on the first impurity region(n1-) to align between the channel stop region(CST) and the gate electrode(Tx). The third impurity region(p0) is formed on the second impurity region(n2-).