| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of maximizing the rounding effect at top corner of the isolation layer. CONSTITUTION: A pad oxide layer(12), a pad nitride layer and a photoresist pattern for defining an isolation region are sequentially formed on a silicon substrate(11). A trench is formed by selectively etching the pad nitride layer, the pad oxide layer and the substrate using the photoresist pattern as a mask. After removing the photoresist pattern, the top corner portions of the trench are exposed by selectively etching the pad nitride layer. A desired impurity ion is implanted into the top corner portions of the trench. By performing oxidation processing of the resultant structure, an oxide layer(16) is formed on the surface of the trench and the top corner portions are simultaneously rounded. An isolation layer(17) is then formed by filling an insulating layer into the trench. The remaining pad nitride layer is removed.
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