| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of minimizing contact resistance and easily obtaining process margin when forming contact having a high vertical topology in a peripheral region. CONSTITUTION: The first insulating layer(31) having an opening part is formed on a conductive layer(30). An organic-based low-permittivity film(34) is filled into the opening part. After forming a capacitor on a cell region, the second insulating layer(35) is formed on the low-permittivity film(34) of the peripheral region. By etching the second insulating layer(35) using a photoresist pattern as a mask, the surface of the low-permittivity film(34) is exposed. The conductive layer(30) is then exposed by removing the low-permittivity film(34).
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