| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of enhancing dynamic range by increasing charge capacity of a photodiode in a pixel unit. CONSTITUTION: A gate electrode(33) is formed on a semiconductor layer(30). An n- region(34) for a photodiode is formed in the semiconductor layer(30) to align one side of the gate electrode(33). A spacer(35) is formed at both sidewalls of the gate electrode. After forming an insulating layer on the resultant structure, the insulating layer locally remains on the semiconductor layer of the n- region(34). A P0 region(38a) is formed in the n- region. At this time, convex parts(38b) are formed at interface between the n- region(34) and the P0 region(38a) due to the profile of the remaining insulating layer.
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