| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for simultaneously thinning semiconductor wafers. SOLUTION: With respect to the devices (10, 100) for simultaneously thinning the rear faces of several semiconductor wafers (W) by using a noncrystalline uniform etching process and a method by using them, the devices (10, 100) include fixing jigs (12,102) having several horizontal receptacles (14, 16, 18, 20, 104, 106, 108 and 110) for housing the semiconductor wafers (W). The loaded fixing jigs (12,102) are impregnated with etching solution (36, 146) which can remove semiconductor material layers in an isotropic manner from the rear faces of the semiconductor wafers (W). The etching solution (36, 146) is preferably heated to about 40-50°C and is constantly agitated by magnetic stirrer bars (48, 158). After a sufficient time has passed, the thinned semiconductor wafers (W) are taken out from the etching solution (36, 146). The devices (10, 100) can simultaneously thin several semiconductor wafers (W) to the final thickness of about 25μm. COPYRIGHT: (C)2003,JPO
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