METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To shape each magnetoresistive effect element in a magnetic memory strictly beyond the resolution limit of photolithography when it is shaped to be effective for suppressing the variation of an inverted magnetic field. SOLUTION: The planar pattern shape of a magnetoresistive effect element having corners is formed such that the corners are completed finally after repeating a lithography step and an etching step a plurality of times. COPYRIGHT: (C)2003,JPO