| 摘要 |
PROBLEM TO BE SOLVED: To release restriction for address skew using a memory cell requiring rewriting of read-out storage information and to realize ease of use being equal to a static RAM using a dynamic memory cell. SOLUTION: A semiconductor memory comprises a memory cell amplifying read-out storage information and requiring rewriting operation, when the memory cell is made a selection state by a variation detecting signal of the address signal, operation until the rewriting is completed is performed, a variation detecting signal of the address signal of the second time is stored while until rewriting of the selected memory cell is completed, after selection operation of the memory cell corresponding to the first address signal variation detecting signal is finished, selection operation of the memory cell of the second time is performed conforming to a variation detecting signal of the stored address signal. COPYRIGHT: (C)2003,JPO
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