| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of the resistance to insulation of gate insulation film of a peripheral transistor for a peripheral circuit unit as well as the resistance to separation of element of a field insulation film, even when nitriding treatment for improving the quality of a tunnel insulation film in a memory cell unit is applied. SOLUTION: The non-volatile semiconductor memory device is manufactured by a method wherein the peripheral circuit unit is covered by a masking means constituted of the laminating structure of a masking poly silicone film 6 and a silicone oxide film 9, while having masking effect against nitrogen when a silicone substrate 1 is treated through nitriding treatment with respect to the tunnel oxide film 8 of the memory cell unit by effecting anneal treatment in an atmosphere containing N<SB>2</SB>O or No. COPYRIGHT: (C)2003,JPO
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