| 摘要 |
PURPOSE: A photosensitive polymer, a photoresist composition containing the polymer and a method for patterning the resist by using the composition are provided, wherein the composition has an excellent resistance against dry etching and a high resolution and can be exposed with KrF, ArF and F2 lasers. CONSTITUTION: The photosensitive polymer contains a repeating unit represented by the formula 1, wherein R1 is H or a methyl group; and R2 is an alkyl or alkoxyalkyl group of C1-C6. Also the photosensitive polymer contains further a repeating unit represented by the formula 2 or 3, wherein R1 is H or a methyl group and R2 is an alkyl or alkoxyalkyl group of C1-C6, l/l+m is 0.5-0.9 in the formula 2, and m/m+n is 0.5-0.8 in the formula 3. Optionally the polymer comprises further 10-40 wt% of maleic anhydride as a third comonomer. The photoresist composition comprises the photosensitive polymer; a photoacid generator; and a solvent. |
