| 摘要 |
PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to be capable of improving corrosion margins and reducing stress of a wafer. CONSTITUTION: A metal film and a photoresist pattern are sequentially formed on a semiconductor wafer having an insulating layer(33). After loading the wafer into an etch chamber, a metal pattern(35) is formed by selectively etching the metal film using the photoresist pattern as a mask. The photoresist pattern is removed. After moving the wafer to a cooling chamber, an oxide layer(41) is formed at both sidewalls of the metal pattern(35) by flowing O2 gas and irradiating ultraviolet via a UV lamp to the cooling chamber.
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