| 摘要 |
PURPOSE: A semiconductor memory device provided with an input and output line sense amplifier is provided to vary the gain in response to the level of an external power voltage. CONSTITUTION: A semiconductor memory device provided with an input and output line sense amplifier varying the gain in response to the level of an external power voltage includes a memory cell array, a pair of input and output lines(IO,IOB) transmitting the data read from the memory cell array, an input and output line sense amplifier(21) for sensing the data transmitted through the pair of input and output lines(IO,IOB) and for amplifying the sensed data and a voltage discriminator(23). In the semiconductor memory device, the voltage discriminator(23) discriminates whether the external power voltage applied from outside is higher than a predetermined voltage or not. And, the gain of the input and output line sense amplifier(21) is increased when the discrimination result from the voltage discriminator(23) is negative.
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