| 摘要 |
PURPOSE: A semiconductor device with an electrostatic discharge circuit is provided to be capable of obtaining an ESD(ElectroStatic Discharge) circuit having small area and chip size and increasing net die. CONSTITUTION: A semiconductor device with an ESD circuit comprises a PNP bipolar transistor(Q11), an NPN bipolar transistor(Q12), a resistor(R) and a peripheral circuit(13). An emitter, a collector and a base of the PNP bipolar transistor(Q11) are connected to a bonding pad(11), a ground voltage(Vss) and a power voltage(Vcc), respectively. Also, an emitter, a collector and a base of the NPN bipolar transistor(Q12) are connected to the power voltage(Vcc), the ground voltage(Vss) and the ground voltage(Vss), respectively. The resistor(R) is connected between the bonding pad(11) and an input buffer(12).
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