| 摘要 |
PURPOSE: A GaN crystal substrate and a fabricating method thereof are provided to grow large-sized GaN crystal and simplify a fabrication process by reacting directly a gallium source with a nitrogen source and growing the GaN crystal. CONSTITUTION: A substrate(310) is prepared to perform a fabrication process for a GaN crystalline substrate. A GaN thin film layer(320) is grown on the substrate by using an MOCVD(Metal Organic Chemical Vapor Deposition) method. A GaN thick film layer(330) is grown on the GaN thin film layer by reacting directly metallic Ga with an ammonia gas. The GaN thin film layer is grown on the GaN thick film layer by using the MOCVD method.
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