| 摘要 |
<P>PROBLEM TO BE SOLVED: To control degradation of properties of a device and performances of a circuit even after thinning them down. <P>SOLUTION: A first MOSFET is provided with a first gate electrode 20 to be formed on a first semiconductor layer 8 of a first region 100 of a semiconductor substrate, a first channel region to be formed on the first semiconductor layer directly below the first gate electrode, a first diffusion layer 34 to become a source and a drain to be formed on the semiconductor layers of both the sides of the first channel region, a first epitaxial film 32 to be formed on the first diffusion layer and a first silicide layer 36 to be formed on the first epitaxial layer. A second MOSFET is provided with a second gate electrode 20, to be formed on a second semiconductor layer 16 of a second region 200 of the semiconductor substrate, a second channel area to be formed on the second semiconductor layer directly below the second gate electrode, a second diffusion layer 34 to become the source and the drain to be formed on the second semiconductor layers of the both sides of the second channel area and a second silicide layer 35 to be formed on the second diffusion layer. <P>COPYRIGHT: (C)2003,JPO |
