发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor element capable of improving production yield in manufacturing elements. SOLUTION: This method includes processes of making a semiconductor layer 14 on a sapphire substrate 1, making grooves 15a and 15b which divide the semiconductor layer 14 into element formation regions 16 where a plurality of elements are formed, and forming the elements on the semiconductor layer 14. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003188060(A) 申请公布日期 2003.07.04
申请号 JP20010385342 申请日期 2001.12.19
申请人 SANYO ELECTRIC CO LTD 发明人 MATSUSHITA YASUHIKO
分类号 H01L21/302;H01L21/02;H01L21/301;H01L21/3065;H01S5/323;H01S5/343;(IPC1-7):H01L21/02;H01L21/306 主分类号 H01L21/302
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