| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can read out easily stored data even if level of power source voltage is reduced. SOLUTION: The nonvolatile semiconductor memory has a ferroelectric capacitor Cf having ferroelectric substance between a pair of electrodes and stores data by polarization of ferroelectric substance in accordance with voltage applied to both electrodes. The device has bit lines BL connected one side of electrodes in the pair of electrodes through a transistor Qb, plate lines PL connected to the other side of electrodes in the pair of electrodes, and a boosting and step-down circuit Z boosting or step-down voltage of the bit lines BL, when high voltage is applies to the bit lines BL, low voltage is applied to the plate lines PL, and data is written, voltage of the bit lines is boosted by the boosting and step-down circuit. Or when low voltage is applied to the bit lines BL, high voltage is applied to the plate lines PL, and data is written, voltage of the bit lines is stepped down. COPYRIGHT: (C)2003,JPO
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