| 摘要 |
PROBLEM TO BE SOLVED: To provide a synchronous semiconductor memory device having multi- bank scheme. SOLUTION: This device is constituted so that the other memory banks can perform data operation (e.g. data read-out operation) of the other mode during the prescribed memory bank performs the prescribe data operation (e.g. data write-in operation). An input data signal is transmitted to a memory bank performing write-in operation through a wrote-in data path WP, and an output data signal is transmitted to an input/output pin from a memory bank performing read-out operation through a read-out data path RP. They are coupled respectively to the memory banks through an input/output line being common to each data path RP, WP. Operation of each bank and each data path RP, WP are synchronized. Consequently, when a first memory bank starts execution of write-in or read-out operation, the second memory bank can start execution of data operation of the other mode after elapse of the prescribed time during the first memory band performs self-data operation continuously. COPYRIGHT: (C)2003,JPO
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