NANOPORE FORMING MATERIAL FOR FORMATION OF INSULATION FILM OF SEMICONDUCTOR AND LOW DIELECTRIC INSULATION FILM CONTAINING THE MATERIAL

摘要

PURPOSE: A nanopore forming material, a coating composition containing the material for the formation of an insulating film of semiconductor, a preparation method of an insulating film using the composition, an insulating film prepared by the method and a semiconductor device containing the insulating film are provided, to enable the molecular weight, the molecular structure and the microenvironment of the nanopore forming material to be controlled easily and the nanopore forming material to be prepared easily. CONSTITUTION: The nanopore forming material is at least one selected from the group consisting of linear organic molecule or polymer, crosslinked organic polymer, hyper-branched organic molecule or polymer and dendrimer-type organic material containing a triazine-based functional group; and is degraded at a temperature of 200-450 deg.C and has a pore size of 0.5-100 nm. Preferably the nanopore forming material is represented by the formula 1, 2 or 3, wherein L is an organic molecule or polymer capable of being degraded at 200-450 deg.C.