| 摘要 |
PURPOSE: A method for manufacturing a polysilicon TFT(Thin Film Transistor) is provided to be capable of improving electrical characteristics of the TFT by effectively removing nickel salicide remaining on a buffer layer before processing following process. CONSTITUTION: A buffer layer(110) is formed on the entire surface of an insulating substrate(100). At this time, the first region(IIa) and the second regions(IIb) formed at both sides of the first region, are defined at the insulating substrate. A polysilicon layer(122) is formed on the buffer layer(110) by carrying out a crystallizing process using nickel salicide as a crystallizing catalyst. After forming a photoresist pattern(120) on the polysilicon layer corresponding to the first region, an isotropic dry etching process is carried out at the polysilicon layer using the photoresist pattern as a mask at the pressure of 100-1000 mTorr. Then, the upper portion of the buffer layer formed at the second region is selectively etched by using the photoresist pattern as a mask. At this time, the remaining nickel salicide is removed.
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