| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the delamination of a metal line by using a fluorine anti-diffusing layer. CONSTITUTION: An oxide layer(4) containing fluorine is formed at the upper portion of a semiconductor structure, wherein the semiconductor structure includes a lower metal line(3). A fluorine anti-diffusing layer made of the first, second, and third anti-diffusing layer(5,6,7) is formed on the oxide layer under predetermined condition. After depositing an upper oxide layer(8) on the entire surface of the resultant structure, a planarization is carried out on the resultant structure. A via hole is then formed by selectively etching the upper oxide layer, fluorine anti-diffusing layer, the oxide layer for exposing the lower metal line.
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