发明名称 |
Thickness measuring apparatus, thickness measuring method, and wet etching apparatus and wet etching method utilizing them |
摘要 |
At each measurement time, reflected light from a semiconductor wafer W or the like by measurement light from a measurement light source 11 is coupled to reference light from a reference light generating section 14, and interference light is detected by a photodetector 15. A raw thickness value calculating section 16b selects two light intensity peaks corresponding to the upper and lower surfaces of the wafer W from a light intensity distribution between an interference light intensity and a reference optical path length and calculates a raw thickness value. A statistical thickness value calculating section 16c executes statistical processing including data sorting, determination whether the raw thickness value falls within an allowable numerical value range, and determination of a thickness change line, thereby obtaining a statistical thickness value. With this arrangement, a thickness measuring apparatus and thickness measuring method capable of measuring the thickness of a semiconductor wafer during execution of wet etching independently of the presence of an etchant, and a wet etching apparatus and wet etching method using the thickness measuring apparatus and method are implemented.
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申请公布号 |
US2003121889(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020275136 |
申请日期 |
2002.11.01 |
申请人 |
TAKAHASHI TERUO;WATANABE MOTOYUKI |
发明人 |
TAKAHASHI TERUO;WATANABE MOTOYUKI |
分类号 |
G01B9/02;G01B11/02;G01B11/06;H01L21/00;H01L21/306;H01L21/66;(IPC1-7):H01L21/306 |
主分类号 |
G01B9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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