发明名称 Semiconductor integrated circuit device and manufacturing method of that
摘要 A laser beam is irradiated onto a photocurable resin layer formed on an electrode part before rearrangement. By scanning the resin on the periphery of a metal wiring formation area extending from the electrode part before rearrangement to a bump electrode contact area, is cured. As a result, a cured resin part is formed which works as a guide layer and a protection film for protecting the metal wire in which the metal wiring formation area has a hollow shape. Thereafter, the metal wire is formed inside the cured resin part.
申请公布号 US2003124830(A1) 申请公布日期 2003.07.03
申请号 US20020331874 申请日期 2002.12.31
申请人 MIYAMOTO TOSHIO 发明人 MIYAMOTO TOSHIO
分类号 H01L23/52;H01L21/288;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/36;H01L23/473;H01L23/485;(IPC1-7):H01L21/44 主分类号 H01L23/52
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