发明名称 |
Semiconductor device, and method for manufacturing the same |
摘要 |
The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center portion formed according to a reoxidation process using a thermal process before the formation of an ion implantation region in a process for forming the metal gate electrode using a replacement process and method for manufacturing the same.
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申请公布号 |
US2003122202(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020329680 |
申请日期 |
2002.12.27 |
申请人 |
KWON HO YUP |
发明人 |
KWON HO YUP |
分类号 |
H01L21/334;H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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