发明名称 Method for making quantitative analysis of nickel
摘要 A method for making a quantitative analysis of nickel that includes the steps of providing an amorphous silicon layer, forming an insulating film on the amorphous silicon layer, depositing nickel on the insulating film, etching a defined portion of the nickel with an etchant to create a specimen, drying the specimen on an AP1 film and subjecting the dried specimen to energy dispersive X-ray fluorescence analysis.
申请公布号 US2003123607(A1) 申请公布日期 2003.07.03
申请号 US20020309279 申请日期 2002.12.04
申请人 LG.PHILIPS LCD CO., LTD. 发明人 KIM BINN;KWON HYUN JA;PARK KYU HO
分类号 G01N9/36;G01N23/223;G01T1/36;(IPC1-7):G01T1/36 主分类号 G01N9/36
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