| 摘要 |
A semiconductor memory device has a plurality of memory block areas, a first power source line and a second power source line for supplying the same potential as the first power source line. At least one of the memory block areas is connected to the first power source line, and at least one of the other memory block areas is connected to the second power source line. For example, when the semiconductor memory device includes four memory block areas, one of two memory block areas simultaneously selected is connected to the first power source line, and the other is connected to the second power source line. Further, one of the other two memory block areas simultaneously selected is connected to the first power source line and the other is connected to the second power source line.
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