发明名称 Low voltage detector
摘要 The present invention relates to a low voltage detector. The low voltage detector comprises a first flash memory cell driven by a ground voltage, for maintaining the potential of a first node to a given potential; a second flash memory cell driven by a power supply voltage, for controlling the potential of a second node; and a comparator for comparing the potentials of the first node and the second node. The difference in current between the first over-erased flash memory cell and the second weakly-programmed flash memory cell is sensed instead of using the reference voltage generator. Thus, a low voltage to be sensed can be freely determined by controlling a cell current. Further, according to the present invention, a constant current can be secured without being affected by change in the supply voltage using the over-erased flash memory cell. In addition, as a circuit to which the first and second flash memory cells are connected is symmetrically constructed, the circuit is not affected by change in the temperature or process.
申请公布号 US2003122590(A1) 申请公布日期 2003.07.03
申请号 US20020284492 申请日期 2002.10.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 O SE EUN
分类号 G11C16/06;G11C5/14;G11C16/30;H03K5/08;H03K19/00;(IPC1-7):H03K5/153 主分类号 G11C16/06
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