| 发明名称 |
Method for forming ruthenium storage node of semiconductor device |
| 摘要 |
Provided is a method for fabricating a capacitor of a semiconductor; and, more particularly, to a method for forming a Ru storage node of a capacitor that can form a stable storage node. The method includes the steps of: a method for forming a ruthenium (Ru) storage node of a semiconductor device, comprising the steps of: etching an insulation layer on a substrate and forming openings; depositing a Ru layer along the profile of the insulation layer and the openings; filling a photoresist in the openings; performing an etching process until the insulation layer between neighboring openings is exposed and forming isolated Ru storage nodes with the Ru layer in the openings; and removing photoresist and polymers with a solution including H2SO4 and H2O2.
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| 申请公布号 |
US2003124747(A1) |
申请公布日期 |
2003.07.03 |
| 申请号 |
US20020291626 |
申请日期 |
2002.11.12 |
| 申请人 |
OH KEE-JOON;CHOI GEUN-MIN |
发明人 |
OH KEE-JOON;CHOI GEUN-MIN |
| 分类号 |
H01L21/308;H01L21/02;H01L21/311;H01L21/3213;H01L21/77;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L21/00;H01L21/824;H01L21/44 |
主分类号 |
H01L21/308 |
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