| 摘要 |
A chemical mechanical polishing (CMP) slurry for applying onto a complex structure consisting of two or more among a metal film, a nitride film and an oxide film and a method for manufacturing a metal line contact plug of a semiconductor device using the slurry. During a CMP process to form a metal line contact plug, an acidic CMP slurry having similar polishing speeds of metal films, oxide films and nitride films and not containing an oxidizer is used. As a result, a metal line contact plug can be easily separated using an acidic CMP slurry without any oxidizer.
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