PHASE SHIFTING MASK

摘要

The invention relates to a phase shifting mask (8) having symmetrical structures (1, 2) for the production of adjacent pairs (5) of structures (1', 2') on a semiconductor wafer (9), such as pairs of trench capacitors for memory modules, the structures (1, 2) inside the pair having a phase deviation difference of 180 DEG in relation to each other. The dimensions of the structures at the limit of resolution of the lighting system enable the influence of lens aberrations on the difference in line width created between the right and the left to be reduced. The invention also relates to a method for producing the structures (1', 2') on the wafer (9), consisting of a step in which the phase attribution to the right structure (2) or left structure (1) is selected according to the sign of the difference in line width when said difference is measured without phase attribution, using the same lighting system.