ELECTRODE STRUCTURE FOR ELECTRONIC AND OPTO-ELECTRONIC DEVICES

摘要

The present invention discloses an electrode structure for electronic and opto−electronic devices.Such a device comprises a first electrode substantially having a conductive layer(204),a nonmetal layer(206)formed on the conductive layer,a fluorocarbon layer(208)formed on the nonmetal layer,a structure(210)formed on the structure.The electrode may further comprise a buffer layer(205)between the conductive layer and the nonmetal layer.