发明名称 |
Method for fabricating semiconductor device with improved refresh characteristics |
摘要 |
Disclosed is a method for fabricating a semiconductor device wherein boron-halo ion implantation is performed only to a bit-line contact part while masking a storage node contact part. The method comprises the steps of: performing a first ion implantation into the semiconductor substrate to control the threshold voltage Vt; forming a gate electrode on the semiconductor substrate in which the first ion implantation has been performed; performing a second ion implantation with a tilt of desired degree, using the gate electrode as a mask in order to control the threshold voltage; and performing a third ion implantation to form an LDD region in the substrate region at both sides of the gate electrode. In this method, the first ion implantation is performed at a range of below 90% of the whole doping concentration required to control the threshold voltage, and the second ion implantation is performed with a degree of below 30° and in two directions or four directions vertical to the gate electrode.
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申请公布号 |
US2003124822(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020328098 |
申请日期 |
2002.12.23 |
申请人 |
SUH MOON SIK;PARK SUNG KYE |
发明人 |
SUH MOON SIK;PARK SUNG KYE |
分类号 |
H01L27/108;H01L21/265;H01L21/336;H01L21/8234;H01L21/8242;(IPC1-7):H01L21/425 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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