| 摘要 |
To produce an integrated semiconductor product comprising an integrated metal-insulator-metal capacitor, a dielectric auxiliary layer (6) is first deposited on a first electrode (2, 3, 5). Said auxiliary layer (6) is then opened over the first electrode (15). A dielectric layer (7) is then created, onto which the stack (8, 9, 10) of metal strips for the second electrode is applied. The metal-insulator-metal capacitor is subsequently patterned using conventional etching technology. This allows the production of dielectric capacitor layers comprising freely selectable materials of any thickness. The particular advantage of the invention is that the etching of vias can be carried out in a significantly simpler manner than in prior art, as it is not necessary to etch through the remaining dielectric capacitor layer over the metal strips.
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