发明名称 |
A PROGRAMMABLE CONDUCTOR RANDOM ACCESS MEMORY AND A METHOD FOR WRITING THERETO |
摘要 |
The present invention provides an improved write circuit and method for writing a programmable conductor random access memory PCRAM cell. The method comprises precharging a bit line to a first voltage and applying a second voltage to a first terminal of a chalcogenide memory element. A second terminal of the chalcogenide memory element is selectively coupled to the bit line to produce a voltage across the memory element sufficient to write a predetermined resistance state into the element. The first voltage may take on two different values to program two different resistance states into the memory element.
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申请公布号 |
WO03054887(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
WO2002US40078 |
申请日期 |
2002.12.16 |
申请人 |
MICRON TECHNOLOGY INC. |
发明人 |
HUSH, GLEN |
分类号 |
G11C13/00;G11C7/12;G11C11/34;G11C13/02;G11C16/10;H01L27/105;H01L45/00;(IPC1-7):G11C11/34 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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