| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a single crystal whereby a single crystal is safely and easily produced while hardly causing the dislocation from a substrate to another layer. <P>SOLUTION: At least one kind of material 4 put in a raw material container 2 is caused to fall down into a pipe 11 to be brought into contact with a first nitrogen gas 20 heated to a first temperature and with the material 4 during falling to give a nitrided compound. This compound is cooled and brought into contact with a second nitrogen gas 26 heated to a second temperature and with the nitrided compound during falling and then, while being kept warm, is allowed to fall down in an atmosphere of a third nitrogen gas 34 to cause a single crystal of the nitrided compound to grow on a seed single crystal 41 on a stand 40. For example, a single crystal of AlN is caused to grow by using Al as the raw material 4. <P>COPYRIGHT: (C)2003,JPO |
