发明名称 Etching solution for etching Cu and Cu/Ti metal layer of liquid crystal display device and method of fabricating the same
摘要 An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.
申请公布号 US2003124851(A1) 申请公布日期 2003.07.03
申请号 US20020331726 申请日期 2002.12.31
申请人 LG.PHILIPS LCD CO., LTD. 发明人 JO GYOO-CHUL;CHAE GEE-SUNG;HWANG YONG-SUP;KWON OH-NAM;LEE KYOUNG-MOOK;BAEK KUI-JONG;RHEE TAI-HYUNG
分类号 G02F1/13;C23F1/18;C23F1/26;H01L21/00;H01L21/302;H01L21/3213;(IPC1-7):H01L21/00 主分类号 G02F1/13
代理机构 代理人
主权项
地址