发明名称 |
DRAM devices, and methods of forming DRAM devices |
摘要 |
The invention includes a DRAM device. The device has an access transistor construction, and the access transistor construction has a pair of source/drain regions. A halo region is associated with one of the source/drain regions of the access transistor construction and no comparable halo region is associated with the other of the source/drain regions of the access transistor construction. The invention also encompasses methods of forming DRAM devices.
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申请公布号 |
US2003124788(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020325159 |
申请日期 |
2002.12.19 |
申请人 |
ROBERTS MARTIN CEREDIG |
发明人 |
ROBERTS MARTIN CEREDIG |
分类号 |
H01L21/265;H01L21/8234;H01L21/8242;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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