发明名称 |
High frequency semiconductor device |
摘要 |
A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground potential; and a back face wiring provided on a back face side of the high frequency semiconductor chip. The back face wiring forms a high frequency transmission line together with the covering electrode functioning as a high frequency ground plate. A front face wiring may be provided on the front face side of the high frequency semiconductor chip to form a high frequency transmission line together with the covering electrode.
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申请公布号 |
US2003122153(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020301816 |
申请日期 |
2002.11.22 |
申请人 |
SUZUKI YOJI;MINETANI KEIJI |
发明人 |
SUZUKI YOJI;MINETANI KEIJI |
分类号 |
H01L23/12;H01L21/338;H01L21/60;H01L21/822;H01L23/522;H01L23/66;H01L25/065;H01L27/04;H01L29/778;H01L29/812;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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