| 摘要 |
The power semiconductor submodule (1) has at least two semiconductor chips (21, 22), which have two main electrodes (3, 4), between two main connections (6, 7), with a contact force being exerted by a contact die (8) on the one main electrode (3), and the other main electrode (4) of the semiconductor chip (21, 22) thus being pressed against a base plate (5). The two semiconductor chips (21, 22) are electrically connected in series between the two main connections (6, 7) of the power semiconductor submodule. Since, like conventional press pack modules, the two semiconductor chips are arranged alongside one another on the base plate, the physical height of the power semiconductor submodule according to the invention is not increased. On the other hand, the electrical series connection increases the maximum blocking voltage of the power semiconductor submodule.
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