发明名称 Correcting the polygon feature pattern with an optical proximity correction method
摘要 The present invention is provided a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner. Such that the polygon feature pattern with at least one inner corner can achieve effectively OPC (optical proximity correction) without adding any extra data point. Therefore, the present invention can instead of the conventional serif and achieves the effective OPC. In addition, the mask writing time is also improved since the original feature pattern is divided into a few rectangular-shaped mask writing units or trapeze-shaped mask writing units for regular mask writing, and the inner corner is/are not in the middle of each divided mask writing units. The mask inspection is also simplified and easier to calibration since a simple geometry other than complex serif is used.
申请公布号 US2003124441(A1) 申请公布日期 2003.07.03
申请号 US20020037132 申请日期 2002.01.02
申请人 UNITED MICROELECTRONICS CORP. 发明人 HSIEH CHANG-JYH;HWANG JIUNN-REN;HUANG JUI-TSEN
分类号 G03F1/14;(IPC1-7):G03F9/00;G03C5/00 主分类号 G03F1/14
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