| 摘要 |
<p>Magnetic device cells such as MRAM cells are described which can be used in sub-micron cell sizes. The present invention describes a method of stabilising magnetic device cells by creating a storage state where the two magnetisation directions of the spin valve are anti-parallel when no readout is performed. This avoids the problem at such small dimensions, that the parallel state of magnetisation directions in a spin valve or a spin tunnel junction become unstable. A high coercivity memory layer is combined with a low coercivity keeper layer. The read out process has also been simplified: only one pulse over the bit line and measurement of the resistance in the word line is sufficient to determine the data stored in a magnetic device cell according to the present invention.</p> |
