发明名称 |
Nonvolatile semiconductor storage and method for manufacturing the same |
摘要 |
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage layer CS includes a first nitride film CS1 made of silicon nitride or silicon oxynitride and a second nitride film CS2 made of silicon nitride or silicon oxynitride and having a higher charge trap density than the first nitride film CS1. The first nitride film CS1 is formed by chemical vapor deposition using a first gas which contains a first silicon-containing gas containing chlorine with a predetermined percent composition and a nitrogen-containing gas as starting materials. The second nitride film CS2 is formed by chemical vapor deposition using a second gas which contains a second silicon-containing gas having a lower chlorine percent composition than the above predetermined percent composition and a nitrogen-containing gas as starting materials.
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申请公布号 |
US2003122204(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020169022 |
申请日期 |
2002.11.12 |
申请人 |
NOMOTO KAZUMASA;AOZASA HIROSHI;FUJIWARA ICHIRO;TANAKA SHINJI |
发明人 |
NOMOTO KAZUMASA;AOZASA HIROSHI;FUJIWARA ICHIRO;TANAKA SHINJI |
分类号 |
H01L21/8247;H01L21/28;H01L21/318;H01L27/115;H01L27/12;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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