| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A semiconductor device includes a trench isolating elements, a memory cell transistor and a peripheral circuit Vcc transistor having a thermal oxide film of a first thickness, and a peripheral circuit Vpp transistor including a thermal oxide film and a thermal oxide film formed before trench formation, having a second thickness greater than the first thickness.
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| 申请公布号 |
US2003124793(A1) |
申请公布日期 |
2003.07.03 |
| 申请号 |
US20020173261 |
申请日期 |
2002.06.18 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUJI NAOKI |
| 分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/336;H01L21/823;H01L21/31;H01L21/469 |
主分类号 |
H01L21/76 |
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