ELECTRICALLY PROGRAMMED MOS TRANSISTOR SOURCE/DRAIN SERIES RESISTANCE

摘要

High-speed MOS transistors (32) are provided by forming a conductive layer (24) embedded in transistor gate sidewall spacers (27). The embedded conductive layer (24) is electrically insulated from the gate electrode (18) and the source/drain regions (28) of the transistor (32). The embedded conductive layer (24) is positioned over the source/drain extensions (30) and causes charge to accumulate in the source/drain extensions (30) lowering the series resistance of the source/drain regions (28).