ELECTRODE STRUCTURE FOR ELECTRONIC AND OPTO-ELECTRONIC DEVICES

摘要

The present invention discloses an electrode structure for electronic and op to- electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.