| 发明名称 |
Metal oxide semiconductor thin film and method of producing the same |
| 摘要 |
An organometal having as molecular structural elements both a semiconductor anion atom and cation atom is applied to a substrate and reacted under heating to obtain p-type and n-type semiconductor thin films whose p-n junctions enable fabrication of a semiconductor device, light-emitting element or solar cell.
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| 申请公布号 |
US2003122122(A1) |
申请公布日期 |
2003.07.03 |
| 申请号 |
US20020316824 |
申请日期 |
2002.12.12 |
| 申请人 |
NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH |
发明人 |
IWATA KAKUYA |
| 分类号 |
H01L21/365;H01L21/16;H01L21/368;H01L31/0296;H01L31/04;H01L31/18;H01L33/28;(IPC1-7):H01L35/24;H01L51/00;H01L29/12 |
主分类号 |
H01L21/365 |
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