| 摘要 |
An integrated temperature sensor having a first PNP-type bipolar transistor diode-connected between a first terminal and a second terminal of the sensor intended to b connected to a reference supply rail; a resistive element and a second diode-connected PNP-type bipolar transistor, connected in series between a third terminal of the sensor and the second terminal, the second bipolar transistor being larger than the first one; a current-to-voltage conversion element connected between a fourth terminal and the second terminal, the first and third terminals being intended to be connected by a voltage-copying element and the first, second, and fourth terminals being intended to each receive an identical current.
|
