发明名称 |
Method of forming a floating gate in a flash memory device |
摘要 |
The present invention relates to a method of forming a floating gate in a flash memory device. Upon formation of a device isolation film, a space of a lower polysilicon layer for a floating gate is defined, a bird's beak is formed on an internal surface of a trench by subsequent well sacrificial oxidization process and well oxidization process and an upper polysilicon layer for a floating gate is then formed, so that the space of the floating gate is formed. Therefore, the present invention can reduce the cost since a mask process is not required compared to an existing stepper method and the process cost since a planarization process using chemical mechanical polishing process (CMP) is not required compared to the self-aligned floating mode.
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申请公布号 |
US2003124800(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020286980 |
申请日期 |
2002.11.04 |
申请人 |
PARK SUNG KEE;KIM KI SEOG;LEE KEUN WOO;SHIM KEON SOO |
发明人 |
PARK SUNG KEE;KIM KI SEOG;LEE KEUN WOO;SHIM KEON SOO |
分类号 |
H01L21/76;H01L21/265;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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