| 摘要 |
A reflection mask, preferably, an EUV reflection mask, for imaging a pattern that has or is formed on the mask onto a semiconductor wafer with extreme ultraviolet radiation or soft X-radiation includes a substrate, a reflection layer thereon reflecting incident radiation, an absorption layer thereon absorbing incident radiation, and a hard mask thereon of a material having an etching selectivity with respect to absorbent material of the absorption layer. After exposure and development of the resist, the pattern is transferred into the hard mask in a first etching step and the resist is removed, and inspection of the pattern in the hard mask detects defects in the hard mask. Defects can be repaired by FIB. Gallium ions are implanted in the absorption layer instead of in the reflection layer, rendering a buffer layer obsolete and allowing lower aspect ratios of trenches on the finished reflection mask.
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