| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus which solves a structural problem of upsizing the apparatus for preventing a leak of magnetic fluxes together with retaining an advantage of a conventional opposed target type capable of sputtering at a high speed and a low temperature, can form a multilayer structure of the thin film having a cost advantage through miniaturization of a structure, multi-targeting and the resulting miniaturization of the vacuum apparatus, in addition, realizes sputtering in a state of higher density plasma, and enables the in-situ multilayer structure of the thin film to be formed in high vacuum at a high speed and at a low temperature. <P>SOLUTION: The thin-film forming apparatus for utilizing voluntary and induced electron-beam-excited plasma in order to realize sputtering in a state of higher density plasma, has a polyhedron target holder which includes the targets on each parallel face arranged around a rotatable rotation shaft of a polyhedron type, and each face in a different pair of polyhedron target holders is arranged to be faced to each other in order to solve the problem of the magnetic flux leak, and magnets on a back side of each target of the polyhedron target holder are arranged so as to alternately change the polarity of the magnet in order to completely close lines of magnetic flux into the inner surface of the polyhedron target holder. <P>COPYRIGHT: (C)2003,JPO |
